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TA2069AF Datasheet(Fiches technique) 5 Page - Toshiba Semiconductor

Numéro de pièce TA2069AF
Description  TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
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TA2069AF
2002-10-30
5
Application Note
1. VCC and GND
This IC has two VCC terminals and three GND terminals. Pattern layout should be designed carefully to reduce
the common impedance.
VCC
VCC (pin 17): Preamplifier stage and power amplifier stage.
GVN VCC (pin 16): Motor governor stage.
GND
PRE GND (pin 1): Preamplifier stage and power amplifier stage except the power drive stage.
PW GND (pin 11): Power drive stage of power amplifier.
GVN GND (pin 12): Motor governor stage.
2. VREF
It is necessary to stabilize the VREF circuit, the internal circuit operate on this reference.
3. Preamplifier
Input signal should be applied to VREF standard, otherwise pop noise become bigger when VCC is turned on and
off.
4. Power amplifier
It is necessary to insert the coupling capacitor through the PW IN terminal. In case that DC current or DC
voltage is applied to the PW IN terminal, the internal circuit has unbalance and the power amplifier doesn't
operate normally.
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Supply voltage
VCC
4
V
(Note 1)
400
Power dissipation
PD
(Note 2)
925
mW
Output current (PW AMP.)
IO (PW)
200
mA
Output current (GVN)
IO (GVN)
700
mA
Operating temperature
Topr
-25~75
°C
Storage temperature
Tstg
-55~150
°C
(Note 1) IC only : Derated above Ta = 25°C in the proportion 3.2mW / °C
(Note 2) IC + PCB (TOSHIBA typical PCB): Derated above Ta = 25°C in the proportion 7.4mW / °C




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