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GS1005FL Fiches technique(PDF) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
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GS1005FL Fiches technique(HTML) 1 Page - Zibo Seno Electronic Engineering Co.,Ltd |
1 / 2 page 65 °C/W GS1000FL – GS1010FL GS1000FL – GS1010FL Characteristic Symbol 1.0A SURFACE MOUNT GLASS PASSIVATED DIODE 4 pF 30 A Weight: 0.01 grams (approx.) Case: SOD-123FL, Molded Plastic Surge Overload Rating to 25A Peak Ultra-Fast Recovery Time Ideally Suited for Automatic Assembly Low Power Loss Classification Rating 94V-O 1.1 V -65 to +150 °C 35 70 140 280 420 560 800 V 50 100 200 400 600 800 1000 V Features ! ! Low Forward Voltage Drop, High Efficiency ! ! ! ! Plastic Case Material has UL Flammability Mechanical Data ! ! Terminals: Solder Plated, Solderable per MIL-STD-750, Method 2026 ! Polarity: Cathode Band or Cathode Notch ! Marking: Type Number ! ! Lead Free: For RoHS / Lead Free Version Maximum Ratings and Electrical Characteristics @T A=25°C unless otherwise specified Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RMS Reverse Voltage VR(RMS) Average Rectified Output Current @TL = 100°C IO 1.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM Forward Voltage @IF = 1.0A VFM Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 10 500 µA Typical Junction Capacitance (Note 2) Cj Typical Thermal Resistance (Note 3) RJL Operating and Storage Temperature Range Tj, TSTG Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A. See figure 5. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC. 3. Mounted on P.C. Board with 8.0mm2 land area. 1 of 2 2.8±0.1 Cathode Band Top View 3.7±0.2 0.6±0.25 SOD - 123FL Dimensions in millimeters Glass passivated device ! ! 00FL GS10 UNITS 01FL GS10 02FL GS10 04FL GS10 06FL GS10 08FL GS10 10FL GS10 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com Alldatasheet |
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Description similaire - GS1005FL |
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