TSHG8400_13 datasheet(2/5 Pages) VISHAY

No de pièce	TSHG8400

Description	High Speed Infrared Emitting Diode

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Fabricant	VISHAY [Vishay Siliconix]

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TSHG8400

www.vishay.com

Vishay Semiconductors

Rev. 1.4, 03-Sep-13

2

Document Number: 81297

For technical questions, contact: emittertechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

Fig. 2 - Forward Current Limit vs. Ambient Temperature

0

20

40

60

80

100

120

140

160

180

200

0

1020

3040506070

8090 100

21142

T

amb - Ambient Temperature (°C)

R

thJA = 230 K/W

0

20

40

60

80

100

120

0

10

203040

50607080

90 100

T

amb - Ambient Temperature (°C)

21143

R

thJA = 230 K/W

BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 100 mA, tp = 20 ms

VF

1.5

1.8

V

IF = 1 A, tp = 100 μs

VF

2.3

V

Temperature coefficient of VF

IF = 1 mA

TKVF

- 1.8

mV/K

Reverse current

VR = 5 V

IR

10

μA

Junction capacitance

VR = 0 V, f = 1 MHz, E = 0

Cj

125

pF

Radiant intensity

IF = 100 mA, tp = 20 ms

Ie

45

70

135

mW/sr

IF = 1 A, tp = 100 μs

Ie

700

mW/sr

Radiant power

IF = 100 mA, tp = 20 ms

φe

50

mW

Temperature coefficient of

φe

IF = 100 mA

TK

φe

- 0.35

%/K

Angle of half intensity

ϕ

± 22

deg

Peak wavelength

IF = 100 mA

λp

830

nm

Spectral bandwidth

IF = 100 mA

Δλ

40

nm

Temperature coefficient of

λp

IF = 100 mA

TK

λp

0.25

nm/K

Rise time

IF = 100 mA

tr

20

ns

Fall time

IF = 100 mA

tf

13

ns

Cut-off frequency

IDC = 70 mA, IAC = 30 mA pp

fc

18

MHz

Virtual source diameter

d

3.7

mm

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