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TSFF5510 Fiches technique(PDF) 1 Page - Vishay Siliconix |
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TSFF5510 Fiches technique(HTML) 1 Page - Vishay Siliconix |
1 / 5 page TSFF5510 www.vishay.com Vishay Semiconductors Rev. 1.3, 23-Aug-11 1 Document Number: 81835 For technical questions, contact: emittertechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Peak wavelength: p = 870 nm • High reliability • High radiant power • High radiant intensity • Angle of half intensity: = ± 38° • Low forward voltage • Suitable for high pulse current operation • High modulation bandwidth: fc = 24 MHz • Good spectral matching with Si photodetectors • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC Note ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • Infrared video data transmission between camcorder and TV set • Free air data transmission systems with high data transmission rates Note • Test conditions see table “Basic Characteristics” Note • MOQ: minimum order quantity 21061 PRODUCT SUMMARY COMPONENT Ie (mW/sr) (deg) p (nm) tr (ns) TSFF5510 32 ± 38 870 15 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSFF5510 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 μs IFM 200 mA Surge forward current tp = 100 μs IFSM 1A Power dissipation PV 180 mW Junction temperature Tj 100 °C Operating temperature range Tamb - 40 to + 85 °C Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t 5 s, 2 mm from case Tsd 260 °C Thermal resistance junction/ambient J-STD-051, leads 7 mm soldered on PCB RthJA 230 K/W |
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