AM4832N datasheet(1/5 Pages) ANALOGPOWER

No de pièce	AM4832N

Description	N-Channel 30-V (D-S) MOSFET

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Fabricant	ANALOGPOWER [Analog Power]

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Analog Power

AM4832N

N-Channel 30-V (D-S) MOSFET

VDS (V)

ID (A)

26

23

Symbol

Limit

Units

VDS

30

VGS

±20

TA=25°C

26

TA=70°C

22

IDM

100

IS

5

A

TA=25°C

3.1

TA=70°C

2.2

TJ, Tstg

-55 to 150

°C

Symbol

Maximum

Units

40

80

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Pulsed Drain Current

b

Continuous Source Current (Diode Conduction)

a

THERMAL RESISTANCE RATINGS

°C/W

Parameter

Operating Junction and Storage Temperature Range

ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)

V

Parameter

Drain-Source Voltage

Maximum Junction-to-Ambient

a

Gate-Source Voltage

PRODUCT SUMMARY

30

rDS(on) (mΩ)

3.2 @ VGS = 10V

4.2 @ VGS = 4.5V

Power Dissipation

a

t <= 10 sec

Steady State

RθJA

ID

A

PD

W

Continuous Drain Current

a

Key Features:

• Low rDS(on) trench technology

• Low thermal impedance

• Fast switching speed

Typical Applications:

• DC/DC Conversion

• Power Routing

• Motor Drives

1

Publication Order Number:

DS_AM4832N_1A

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Fabricant	No de pièce	Fiches technique	Description
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
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	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

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AM4832N Fiches technique(PDF) 1 Page - Analog Power

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