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RGTH80TK65D Fiches technique(PDF) 7 Page - Rohm |
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RGTH80TK65D Fiches technique(HTML) 7 Page - Rohm |
7 / 13 page www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. Data Sheet RGTH80TK65D lElectrical Characteristic Curves Gate To Emitter Voltage : V GE [V] Gate To Emitter Voltage : V GE [V] Collector Current : I C [A] Fig.12 Typical Switching Time vs. Gate Resistance Gate Resistance : R G [Ω] Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Fig.11 Typical Switching Time vs. Collector Current 0 5 10 15 20 5 10 15 20 T j= 25ºC I C= 80A I C= 20A I C= 40A 0 5 10 15 20 5 10 15 20 T j= 175ºC I C= 80A I C= 20A I C= 40A 10 100 1000 0 10 20 30 40 50 60 70 80 t f V CC=400V, VGE=15V R G=10Ω, Tj=175ºC Inductive load t d(off) t d(on) t r 10 100 1000 0 10 20 30 40 50 t f t d(off) t d(on) t r V CC=400V, IC=40A V GE=15V, Tj=175ºC Inductive load 7/11 2016.01 - Rev.A |
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