S9014 datasheet(1/4 Pages) JIANGSU

No de pièce	S9014

Description	SOT-23 Plastic-Encapsulate Transistors

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

S9014

TRANSISTOR (NPN)

FEATURES

Complementary to S9015

MARKING: J6

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC= 100μA, IE=0

50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= 0.1mA, IB=0

45

V

Emitter-base breakdown voltage

V(BR)EBO

IE=100μA, IC=0

5

V

Collector cut-off current

ICBO

VCB=50 V , IE=0

0.1

μA

Collector cut-off current

ICEO

VCE=35V , IB=0

1

μA

Emitter cut-off current

IEBO

VEB= 3V , IC=0

0.1

μA

DC current gain

hFE

VCE=5V, IC= 1mA

200

1000

Collector-emitter saturation voltage

VCE(sat)

IC=100 mA, IB= 5mA

0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=100 mA, IB= 5mA

1

V

Transition frequency

fT

VCE=5V, IC= 10mA

f=30MHz

150

MHz

CLASSIFICATION OF hFE

Rank

L

H

Range

200-450

450-1000

SOT-23

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

E,Sep,2016

JC T

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

50

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

100

mA

PC

Collector Power Dissipation

200

mW

RΘJA

Thermal Resistance From Junction To Ambient

625

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55～+150

℃

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