2N5087 datasheet(1/3 Pages) JIANGSU

No de pièce	2N5087

Description	TO-92 Plastic-Encapsulate Transistors

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Fabricant	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

Site Internet	http://www.cj-elec.com/en/

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TO – 92

1. EMITTER

2. BASE

3. COLLECTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2N5087

TRANSISTOR (PNP)

FEATURES

General Purpose Amplifier Transistor

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-0.1mA,IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-0.01mA,IC=0

-3

V

Collector cut-off current

ICBO

VCB=-35V,IE=0

-50

nA

Emitter cut-off current

IEBO

VEB=-3V,IC=0

-50

nA

hFE(1)

*

VCE=-5V, IC=-0.1mA

250

800

hFE(2)

*

VCE=-5V, IC=-1mA

250

DC current gain

hFE(3)

*

VCE=-5V, IC=-10mA

250

Collector-emitter saturation voltage

VCE(sat)

*

IC=-10mA,IB=-1mA

-0.3

V

Base-emitter voltage

VBE

*

VCE=-5V, IC=-10mA

-0.85

V

Collector output capacitance

Cob

VCB=-5V,IE=0, f=1MHz

4

pF

Transition frequency

fT

VCE=-5V,IC=-0.5mA, f=100MHz

40

MHz

*Pulse test: pulse width ≤380μs, duty cycle≤ 2.0%.

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage

-50

V

VCEO

Collector-Emitter Voltage

-50

V

VEBO

Emitter-Base Voltage

-3

V

IC

Collector Current

-50

mA

PC

Collector Power Dissipation

625

mW

RθJA

Thermal Resistance From Junction To Ambient

200

℃/W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~+150

℃

www.cj-elec.com

1

C,Dec,2015

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