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4N32-X017T Fiches technique(PDF) 2 Page - Vishay Siliconix |
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4N32-X017T Fiches technique(HTML) 2 Page - Vishay Siliconix |
2 / 6 page 4N32, 4N33 www.vishay.com Vishay Semiconductors Rev. 1.2, 15-Feb-11 2 Document Number: 81865 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). Notes • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements (1) Indicates JEDEC® registered values ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT INPUT Reverse voltage VR 3V Forward current IF 60 mA Power dissipation Pdiss 100 mW Derate linearly From 55 °C 1.33 mW/°C OUTPUT Collector emitter breakdown voltage BVCEO 30 V Emitter base breakdown voltage BVEBO 8V Collector base breakdown voltage BVCBO 50 V Emitter collector breakdown voltage BVECO 5V Collector (load) current IC 100 mA Power dissipation Pdiss 150 mW Derate linearly 2mW/°C COUPLER Total dissipation Ptot 250 mW Derate linearly 3.3 mW/°C Isolation test voltage (between emitter 1 s VISO 5300 VRMS Leakage path 7mm min. Air path 7mm min. Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature Tstg -55 to +150 °C Operating temperature Tamb -55 to +100 °C Lead soldering time (1) at 260 °C 10 s ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 50 mA VF - 1.25 1.5 V Reverse current VR = 3 V IR - 0.1 100 μA Capacitance VR = 0 V CO -25 pF OUTPUT Collector emitter breakdown voltage (1) IC = 100 μA, IF = 0 BVCEO 30 - - V Collector base breakdown voltage (1) IC = 100 μA, IF = 0 BVCBO 50 - - V Emitter base breakdown voltage (1) IC = 100 μA, IF = 0 BVEBO 8- - V Emitter collector breakdown voltage (1) IC = 100 μA, IF = 0 BVECO 510 - V Collector emitter leakage current VCE = 10 V, IF = 0 ICEO - 1 100 nA IC = 0.5 mA, VCE = 5 V hFE 13 - - COUPLER Collector emitter saturation voltage VCEsat -1 - V Coupling capacitance - 1.5 - pF |
Numéro de pièce similaire - 4N32-X017T |
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Description similaire - 4N32-X017T |
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