BF370 datasheet(2/5 Pages) FOSHAN

No de pièce	BF370

Description	Silicon NPN transistor in a TO-92(R) Plastic Package

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Fabricant	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

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2 / 5 page

BF370

Rev.E Mar.-2016

DATA SHEET

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参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

40

V

Collector to Emitter Voltage

VCEO

15

V

Emitter to Base Voltage

VEBO

4.5

V

Collector Current - Continuous

IC

100

mA

Peak Collector Current

ICM

200

mA

Collector Power Dissipation

PC

500

mW

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector Cut-Off Current

ICBO

VCB=20V

IE=0

30

μA

Emitter Cut-Off Current

IEBO

VEB=2.0V

IC=0

0.1

μA

DC Current Gain

hFE

VCE=1.0V

IC=10mA

40

Collector Capacitance

Cc

IE=ie=0

VCB=10V

f=1.0MHz

2.2

pF

Emitter Capacitance

Ce

IC=ic=0

VEB=1.0V

f=1.0MHz

4.5

pF

Feedback Capacitance

Cre

VCB=10V

IC=0

f=1.0MHz

1.6

pF

Transition Frequency

fT

VCE=10V

IC=10mA

f=100MHz

500

MHz

VCE=10V

IC=40mA

f=100MHz

490

MHz

极限参数 / Absolute Maximum Ratings(Ta=25℃)

Numéro de pièce similaire - BF370

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	BF370	41Kb / 8P	NPN medium frequency transistor 1999 Apr 21
NXP Semiconductors	BF370	104Kb / 6P	NPN medium frequency transistor 2004 Nov 08
SHENZHEN YONGERJIA INDU...	BF370	125Kb / 1P	TRANSISTOR (NPN)
Jiangsu Changjiang Elec...	BF370	404Kb / 3P	TO-92 Plastic-Encapsulate Transistors
Continental Device Indi...	BF370R	106Kb / 3P	NPN SILICON PLANAR TRANSISTOR

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Description similaire - BF370

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BF370 Fiches technique(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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