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2SA1480 Fiches technique(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

No de pièce 2SA1480
Description  Silicon PNP transistor in a TO-126F Plastic Package
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Fabricant  FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]
Site Internet  http://www.fsbrec.com/
Logo FOSHAN - Foshan Blue Rocket Electronics Co.,Ltd.

2SA1480 Fiches technique(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd.

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2SA1480
Rev.E Mar.-2016
DATA SHEET
http://www.fsbrec.com
2 / 6
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
-300
V
Collector to Emitter Voltage
VCEO
-300
V
Emitter to Base Voltage
VEBO
-5.0
V
Collector Current - Continuous
IC
-100
mA
Collector Current – Continuous(Pulse)
ICP
-200
mA
Collector Power Dissipation
PC
1.5
W
Collector Power Dissipation
PC(Tc=25 )
7.0
W
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值
Min
典型值
Typ
最大值
Max
单位
Unit
Collector to Base Breakdown
Voltage
VCBO
IC=-10μA
IE=0
-300
V
Collector to Emitter Breakdown
Voltage
VCEO
IC=-1.0mA
RBE=∞
-300
V
Emitter to Base Breakdown Voltage
VEBO
IE=-10μA
IC=0
-5.0
V
Collector Cut-Off Current
ICBO
VCB=-200V
IE=0
-0.1
μA
Emitter Cut-Off Current
IEBO
VEB=-4.0V
IC=0
-0.1
μA
DC Current Gain
hFE
VCE=-10V
IC=-10mA
40
320
Collector to Emitter Saturation
Voltage
VCE(sat) IC=-20mA
IB=-2.0mA
-0.6
V
Base to Emitter Saturation Voltage
VBE(sat) IC=-20mA
IB=-2.0mA
-1.0
V
Transition Frequency
fT
VCE=-30V
IC=-10mA
150
MHz
Collector Output Capacitance
Cob
VCB=-30V
f=1.0MHz
3.1
pF
Reverse Transfer Capacitance
Cre
VCB=-30V
f=1.0MHz
2.3
pF
极限参数 / Absolute Maximum Ratings(Ta=25℃)
电性能参数 / Electrical Characteristics(Ta=25℃)


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