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BTA16F Fiches technique(PDF) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
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BTA16F Fiches technique(HTML) 2 Page - Foshan Blue Rocket Electronics Co.,Ltd. |
2 / 8 page BTA16F Rev.E Mar.-2016 DATA SHEET http://www.fsbrec.com 2 / 8 参数 Parameter 符号 Symbol 数值 Rating 单位 Unit Repetitive peak off-state voltages VDRM/VRRM 600/800 V On-state rms current(full sine wave TC=86℃) IT(RMS) 16 A Non repetitive surge peak on-state current(full cycle, Tj initial = 25 °C) ITSM(F=50Hz t=20ms) 160 A Non repetitive surge peak on-state current(full cycle, Tj initial =25°C) ITSM(F=60Hz t=16.7ms) 168 A I2t value for fusing I2t(tp=10ms) 144 A2s Critical rate of rise of on-state current IG =2xIGT, tr≤100 ns(F=120Hz Tj=125℃) dI/dt 50 A/μs Non repetitive surge peak off-state Voltage(tp = 10 ms Tj =25°C) VDSM/VRSM VDRM/VRRM + 100 V Peak gate current(tp =20μs Tj=125℃) IGM 4.0 A Average gate power dissipation(Tj=125℃) PG(AV) 1.0 W Maximum operating Junction Temperature Tj -40~125 ℃ Storage Temperature Range Tstg -40~150 ℃ Junction to ambient Rth(j-a) 60 /W ℃ Junction to case (AC) Rth(j-c) 2.1 /W ℃ 符号 Symbol 测试条件 Test Conditions 信号区 Quadrant BTA16F 单位 Unit SW CW BW IGT (1) VD=12V RL=33Ω I-II-III Max. 10 35 50 mA VGT VD=12V RL=33Ω I-II-III Max. 1.3 V VGD VD=VDRM RL=3.3KΩ Tj=125℃ I-II-III Min. 0.2 V IH (2) IT=500mA Max. 15 35 50 mA IL IG=1.2IGT I-III Max. 25 50 70 mA II 30 60 80 dV/dt (2) VD = 67 % VDRM gate open Tj = 125° C Min. 40 500 1000 V/μs (dI/dt)c (2) (dV/dt)c = 0.1V/μS Tj = 125° C Min. 8.5 - - A/mS (dV/dt)c = 10V/μS Tj = 125° C Min. 3.0 - - Without snubber Tj = 125° C Min. - 8.5 14 Note 1:minimum IGT is guaranted at 5% of IGT max. Note 2:for both polarities of A2 referenced to A1. 极限参数 / Absolute Maximum Ratings(Ta=25℃) 电性能参数 / Electrical Characteristics(Ta=25℃) 免缓冲器和逻辑电平(3 象限) / Snubberless and logic level(3 quadrants) |
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