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CSD18511KCS Fiches technique(PDF) 1 Page - Texas Instruments |
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CSD18511KCS Fiches technique(HTML) 1 Page - Texas Instruments |
1 / 10 page Qg - Gate Charge (nC) 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 7 8 9 10 D004 ID = 100 A VDS = 20 V VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 D007 TC = 25°C, I D = 100 A TC = 125°C, I D = 100 A Gate (Pin 1) Drain (Pin 2) Source (Pin 3) Product Folder Order Now Technical Documents Tools & Software Support & Community An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD18511KCS SLPS548 – JULY 2017 CSD18511KCS 40-V N-Channel NexFET™ Power MOSFET 1 1 Features 1 • Low Qg and Qgd • Low RDS(ON) • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • TO-220 Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 2.1-mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Product Summary TA = 25°C TYPICAL VALUE UNIT VDS Drain-to-Source Voltage 40 V Qg Gate Charge Total (10 V) 63.9 nC Qgd Gate Charge Gate-to-Drain 9.7 nC RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 3.2 m Ω VGS = 10 V 2.1 VGS(th) Threshold Voltage 1.8 V Device Information(1) DEVICE MEDIA QTY PACKAGE SHIP CSD18511KCS Tube 50 TO-220 Plastic Package Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage ±20 V ID Continuous Drain Current (Package Limited) 110 A Continuous Drain Current (Silicon Limited), TC = 25°C 194 Continuous Drain Current (Silicon Limited), TC = 100°C 137 IDM Pulsed Drain Current(1) 400 A PD Power Dissipation 188 W TJ, Tstg Operating Junction, Storage Temperature –55 to 175 °C EAS Avalanche Energy, Single Pulse ID = 56 A, L = 0.1 mH, RG = 25 Ω 156 mJ (1) Max RθJC = 0.8°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%. RDS(on) vs VGS Gate Charge |
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Description similaire - CSD18511KCS |
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