2SC2881A datasheet(2/6 Pages) FOSHAN

No de pièce	2SC2881A

Description	Silicon NPN transistor in a SOT-89 Plastic Package

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Fabricant	FOSHAN [Foshan Blue Rocket Electronics Co.,Ltd.]

Site Internet	http://www.fsbrec.com/

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2 / 6 page

2SC2881A

Rev.E Mar.-2016

DATA SHEET

http://www.fsbrec.com

2 / 6

参数

Parameter

符号

Symbol

数值

Rating

单位

Unit

Collector to Base Voltage

VCBO

250

V

Collector to Emitter Voltage

VCEO

250

V

Emitter to Base Voltage

VEBO

5.0

V

Collector Current-Continuous

IC

800

mA

Collector Base-Continuous

IB

160

mA

Collector Power Dissipation

PC

500

mW

Collector Power Dissipation*

*PC

1.0

W

Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55～150

℃

*Mounted on ceramic substrate(250mm2×0.8t)

*装于 250mm2×0.8t 的陶瓷上。

参数

Parameter

符号

Symbol

测试条件

Test Conditions

最小值

Min

典型值

Typ

最大值

Max

单位

Unit

Collector to Emitter Breakdown

Voltage

VCEO

IC=1.0mA

IC=0

250

V

Emitter to Base Breakdown Voltage

VEBO

VCB=250V

IE=0

5.0

V

Collector Cut-Off Current

ICBO

VEB=5.0V

IC=0

0.1

μA

Emitter Base Cut-Off Current

IEBO

VCE=5.0V

IC=100mA

0.1

μA

DC Current Gain

hFE

IC=500mA

IB=50mA

80

240

Collector to Emitter Saturation

Voltage

VCE(sat) VCE=5.0V

IC=500mA

1.0

V

Emitter to Base Saturation Voltage

VBE

VCE=5.0V

IC=100mA

1.0

V

Transition Frequency

fT

VCB=10V

IE=0

f=1.0MHz

120

MHz

Collector Output Capacitance

Cob

IC=1.0mA

IC=0

30

pF

极限参数 / Absolute Maximum Ratings(Ta=25℃)

电性能参数 / Electrical Characteristics(Ta=25℃)

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