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LM3670 Datasheet(Fiches technique) 4 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Numéro de pièce LM3670
Description  Miniature Step-Down DC-DC Converter for Ultra Low Voltage Circuits
Télécharger  17 Pages
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Fabricant  NSC [National Semiconductor (TI)]
Site Internet  http://www.national.com
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
V
IN Pin: Voltage to GND
−0.2V to 6.0V
EN Pin: Voltage to GND
−0.2V to 6.0V
FB, SW Pin:
(GND−0.2V) to
(V
IN + 0.2V)
Junction Temperature (T
J-MAX)
−45˚C to +125˚C
Storage Temperature Range
−45˚C to +150˚C
Maximum Lead Temperature
(Soldering, 10 sec.)
260˚C
ESD Rating (Note 3)
Human Body Model:
VIN,SW,FB,GND
2.0kV
EN
500V
Machine Model:
200V
Operating Ratings (Notes 1, 2)
Input Voltage Range
2.5V to 5.5V
Recommended Load Current
0A to 350 mA
Junction Temperature (T
J) Range
−40˚C to +125˚C
Ambient Temperature (T
A) Range
−40˚C to +85˚C
Thermal Properties
Junction-to-Ambient
Thermal Resistance (
θ
JA)
(SOT23-5)
250˚C/W
Electrical Characteristics Limits in standard typeface are for T
J = 25˚C. Limits in boldface type apply over
the full operating junction temperature range (−40˚C
≤ T
J
≤ +125˚C). Unless otherwise noted V
IN = 3.6V, VOUT = 1.8V,
I
O=150mA, EN=VIN
Symbol
Parameter
Condition
Min
Typ
Max
Units
V
IN
Input Voltage Range
2.5
5.5
V
V
OUT
Fixed Output Voltage
2.5V
≤ V
IN
≤ 5.5V
I
O =10mA
-1.5
+3.0
%
2.5V
≤ V
IN
≤ 5.5V
0mA
≤ I
O
≤ 350 mA
−4.5
+3.0
%
Adjustable Output Voltage
2.5V
≤ V
IN
≤ 5.5V
I
O =10mA
-1.0
+2.5
%
2.5V
≤ V
IN
≤ 5.5V
0mA
≤ I
O
≤ 350 mA
-4.0
+2.5
%
Line Regulation
2.5V
≤ V
IN
≤ 5.5V
I
O =10mA
0.26
%/V
Load Regulation
150 mA
≤ I
O
≤ 350 mA
0.0014
%/mA
V
REF
Internal Reference Voltage
0.5
V
I
Q_SHDN
Shutdown Supply Current
T
A=85
oC
0.1
1
µA
I
Q_PFM
DC Bias Current into V
IN
No load, device is not switching
(V
OUT forced higher than
programmed output voltage)
15
30
µA
V
UVLO
Minimum V
IN below which
V
OUT will be disabled
2.4
V
R
DSON (P)
Pin-Pin Resistance for PFET
V
IN=VGS=3.6V
360
690
m
R
DSON (N)
Pin-Pin Resistance for NFET
V
IN=VGS=3.6V
250
660
m
I
LKG (P)
P Channel Leakage Current
V
DS=5.5V
0.1
1
µA
I
LKG (N)
N Channel Leakage Current
V
DS=5.5V
0.1
1.5
µA
I
LIM
Switch Peak Current Limit
400
620
750
mA
η
Efficiency
(V
IN = 3.6V, VOUT = 1.8V)
I
LOAD =1mA
91
%
I
LOAD =10mA
94
I
LOAD = 100 mA
94
I
LOAD = 200 mA
94
I
LOAD = 300 mA
92
I
LOAD = 350 mA
90
www.national.com
4




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