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FMF10N65 Fiches technique(PDF) 1 Page - First Components International

No de pièce FMF10N65
Description  10Amps 650 Voltage N Channel MOSFET
Download  7 Pages
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Fabricant  FCI [First Components International]
Site Internet  http://www.cotra.com.tw/
Logo FCI - First Components International

FMF10N65 Fiches technique(HTML) 1 Page - First Components International

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Absolute Maximum Ratings (* Drain current limited by junction temperature)
Symbol
Parameter
Value
Units
VDSS
Drain to Source Voltage
650
V
ID
Continuous Drain Current(@TC = 25°C)
10*
A
Continuous Drain Current(@TC = 100°C)
6*
A
IDM
Drain Current Pulsed
(Note 1)
40*
A
VGS
Gate to Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
812
mJ
EAR
Repetitive Avalanche Energy
(Note 1)
15.6
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Total Power Dissipation(@TC = 25 °C)
50
W
Derating Factor above 25 °C
0.4
W/°C
TSTG, TJ
Operating Junction Temperature & Storage Temperature
- 55 ~ 150
°C
TL
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
300
°C
Thermal Characteristics
Symbol
Parameter
Value
Units
Min.
Typ.
Max.
RθJC
Thermal Resistance, Junction-to-Case
-
-
2.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
62.5
°C/W
Features
RDS(on) (Typical 0.70 Ω )@VGS=10V
Gate Charge (Typical 45nC)
Improved dv/dt Capability, High Ruggedness
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
General Description
This Power MOSFET is produced using Wisdom’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. These devices are well suited
for high efficiency switch mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge topology.
N-Channel MOSFET
Symbol
2. Drain
3. Source
1. Gate
TO-220F
1
2
3
FMF10N65 10Amps 650 Voltage N Channel MOSFET


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