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FMF10N65 Fiches technique(PDF) 1 Page - First Components International |
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FMF10N65 Fiches technique(HTML) 1 Page - First Components International |
1 / 7 page ● ● ● ▲ ◀ ● ● ● ▲ ◀ Absolute Maximum Ratings (* Drain current limited by junction temperature) Symbol Parameter Value Units VDSS Drain to Source Voltage 650 V ID Continuous Drain Current(@TC = 25°C) 10* A Continuous Drain Current(@TC = 100°C) 6* A IDM Drain Current Pulsed (Note 1) 40* A VGS Gate to Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 812 mJ EAR Repetitive Avalanche Energy (Note 1) 15.6 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Total Power Dissipation(@TC = 25 °C) 50 W Derating Factor above 25 °C 0.4 W/°C TSTG, TJ Operating Junction Temperature & Storage Temperature - 55 ~ 150 °C TL Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. 300 °C Thermal Characteristics Symbol Parameter Value Units Min. Typ. Max. RθJC Thermal Resistance, Junction-to-Case - - 2.5 °C/W RθJA Thermal Resistance, Junction-to-Ambient - - 62.5 °C/W Features ■ RDS(on) (Typical 0.70 Ω )@VGS=10V ■ Gate Charge (Typical 45nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C) General Description This Power MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. N-Channel MOSFET Symbol 2. Drain 3. Source 1. Gate TO-220F 1 2 3 FMF10N65 10Amps 650 Voltage N Channel MOSFET |
Numéro de pièce similaire - FMF10N65 |
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Description similaire - FMF10N65 |
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