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KM681001B-20 Fiches technique(PDF) 3 Page - Samsung semiconductor

No de pièce KM681001B-20
Description  128K x 8 Bit High-Speed CMOS Static RAM
Download  9 Pages
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Fabricant  SAMSUNG [Samsung semiconductor]
Site Internet  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM681001B-20 Fiches technique(HTML) 3 Page - Samsung semiconductor

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KM681001B
CMOS SRAM
PRELIMINARY
Rev 2.0
- 3 -
February 1998
RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70
°C)
NOTE: * VIL(Min) = -2.0V a.c(Pulse Width
≤10ns) for I≤20mA
** VIH(Max) = VCC + 2.0V a.c (Pulse Width
≤10ns) for I≤20mA
Parameter
Symbol
Min
Typ
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Ground
VSS
0
0
0
V
Input High Voltage
VIH
2.2
-
VCC+0.5**
V
Input Low Voltage
VIL
-0.5*
-
0.8
V
DC AND OPERATING CHARACTERISTICS(TA=0 to 70
°C, Vcc=5.0V±10%, unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Max
Unit
Input Leakage Current
ILI
VIN = VSS to VCC
-2
2
µA
Output Leakage Current
ILO
CS1=VIH or CS2=VIL or OE=VIH or WE=VIL,
VOUT = VSS to VCC
-2
2
µA
Operating Current
ICC
Min. Cycle, 100% Duty CS1=VIL,
CS2=VIH, VIN=VIH or VIL, IOUT=0mA
15ns
-
125
mA
20ns
-
123
Standby Current
ISB
Min. Cycle, CS1=VIH or CS2=VIL
-
20
mA
ISB1
f=0MHz, CS1
≥VCC-0.2V or CS2≤0.2V,
VIN
≥VCC-0.2V or VIN≤0.2V
-
5
Output Low Voltage Level
VOL
IOL=8mA
-
0.4
V
Output High Voltage Level
VOH
IOH=-4mA
2.4
-
V
CAPACITANCE*(TA=25
°C, f=1.0MHz)
* NOTE : Capacitance is sampled and not 100% tested.
Item
Symbol
Test Conditions
MIN
Max
Unit
Input/Output Capacitance
CI/O
VI/O=0V
-
8
pF
Input Capacitance
CIN
VIN=0V
-
6
pF
ABSOLUTE MAXIMUM RATINGS*
* Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
Voltage on Any Pin Relative to VSS
VIN, VOUT
-0.5 to 7.0
V
Voltage on VCC Supply Relative to VSS
VCC
-0.5 to 7.0
V
Power Dissipation
PD
1.0
W
Storage Temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
0 to 70
°C


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