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IRF8915 Fiches technique(PDF) 1 Page - International Rectifier |
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IRF8915 Fiches technique(HTML) 1 Page - International Rectifier |
1 / 10 page www.irf.com 1 03/31/04 IRF8915 HEXFET® Power MOSFET Notes through
are on page 10 Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current SO-8 PD - 95858 Applications Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage V VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V A IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation W PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead ––– 20 °C/W RθJA Junction-to-Ambient f ––– 62.5 -55 to + 150 2.0 0.016 1.3 Max. 8.9 7.1 71 ± 20 20 D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 VDSS RDS(on) max ID 20V 18.3m :@V GS = 10V 8.9A |
Numéro de pièce similaire - IRF8915 |
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Description similaire - IRF8915 |
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