UPA2735GR_16 datasheet(1/7 Pages) RENESAS

No de pièce	UPA2735GR

Description	P-channel MOSFET

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R07DS1319EJ0100 Rev.1.00

Page 1 of 6

Jan 25, 2016

Data Sheet

μPA2735GR

P-channel MOSFET

–30 V, –16 A, 5.0 m

Ω

Description

The

μ PA2735GR is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management

applications of portable equipment.

Features

• V

DSS = −30 V (TA = 25°C)

• Low on-state resistance

⎯ R

DS(on) = 5.0 mΩ MAX. (VGS = −10 V, ID = −16 A)

• 4.5 V Gate-drive available

• Small and surface mount package (SOP-8)

• Pb-free and Halogen free

Ordering Information

Part No.

LEAD PLATING

PACKING

Package

μ PA2735GR-E1-AX

Ni / Pd / Au

Tape 2500 p/reel

SOP-8

0.085 g TYP.

μ PA2735GR-E2-AX

Absolute Maximum Ratings (TA = 25°C)

Item

Symbol

Ratings

Unit

Drain to Source Voltage (VGS = 0 V)

VDSS

−30

V

Gate to Source Voltage (VDS = 0 V)

VGSS

m20

V

Drain Current (DC)

ID(DC)

m16

A

Drain Current (pulse)

∗1

ID(pulse)

m150

A

Total Power Dissipation

∗2

PT1

1.1

W

Total Power Dissipation (PW = 10 sec)

∗2

PT2

2.5

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

−55 to +150

°C

Single Avalanche Current

∗3

IAS

16

A

Single Avalanche Energy

∗3

EAS

25.6

mJ

Thermal Resistance

Channel to Ambient Thermal Resistance

∗2

Rth(ch-A)

114

°C/W

Notes:

∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%

∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt

∗3. Starting T

ch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH

R07DS1319EJ0100

Rev.1.00

Jan 25, 2016

Power SOP8

Numéro de pièce similaire - UPA2735GR_16

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Renesas Technology Corp	UPA2735GR-E1-AT	188Kb / 8P	P-channel MOSFET -30 V, -16 A, 5.0 m
Renesas Technology Corp	UPA2735GR-E2-AT	188Kb / 8P	P-channel MOSFET -30 V, -16 A, 5.0 m

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