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IRF7311 Fiches technique(PDF) 2 Page - International Rectifier |
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IRF7311 Fiches technique(HTML) 2 Page - International Rectifier |
2 / 7 page IRF7311 Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) showing the ISM Pulsed Source Current integral reverse (Body Diode) p-n junction diode. VSD Diode Forward Voltage ––– 0.72 1.0 V TJ = 25°C, IS = 1.7A, VGS = 0V trr Reverse Recovery Time ––– 52 77 ns TJ = 25°C, IF = 1.7A Qrr Reverse RecoveryCharge ––– 58 86 nC di/dt = 100A/µs Source-Drain Ratings and Characteristics ––– ––– ––– ––– 26 2.5 A S D G
Surface mounted on 1 in square Cu board Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Notes: Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. Pulse width ≤ 300µs; duty cycle ≤ 2%. Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 20 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.027 ––– V/°C Reference to 25°C, ID = 1mA ––– 0.023 0.029 VGS = 4.5V, ID = 6.0A ––– 0.030 0.046 VGS = 2.7V, ID = 5.2A VGS(th) Gate Threshold Voltage 0.7 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance ––– 20 ––– S VDS = 10V, ID = 6.0A ––– ––– 1.0 VDS = 16V, VGS = 0V ––– ––– 5.0 VDS = 16V, VGS = 0V, TJ = 55°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 12V Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -12V Qg Total Gate Charge ––– 18 27 ID = 6.0A Qgs Gate-to-Source Charge ––– 2.2 3.3 nC VDS = 10V Qgd Gate-to-Drain ("Miller") Charge ––– 6.2 9.3 VGS = 4.5V, See Fig. 10 td(on) Turn-On Delay Time ––– 8.1 12 VDD = 10V tr Rise Time ––– 17 25 ID = 1.0A td(off) Turn-Off Delay Time ––– 38 57 RG = 6.0Ω tf Fall Time ––– 31 47 RD = 10Ω Ciss Input Capacitance ––– 900 ––– VGS = 0V Coss Output Capacitance ––– 430 ––– pF VDS = 15V Crss Reverse Transfer Capacitance ––– 200 ––– ƒ = 1.0MHz, See Fig. 9 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) IGSS µA Ω RDS(on) Static Drain-to-Source On-Resistance IDSS Drain-to-Source Leakage Current nA ns |
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