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SMP100LC-35 Fiches technique(PDF) 4 Page - STMicroelectronics |
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SMP100LC-35 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 8 page SMP100LC-xxx 4/8 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 0 10 20 30 40 50 60 70 t(s) ITSM(A) F=50Hz Fig. 1: Non repetitive surge peak on-state current versus overload duration (Tj initial = 25 °C). -25 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Tj(°C) IH[Tj] / IH[Tj=25°C] Fig. 3: Relative variation of holding current versus junction temperature . -25 0 25 50 75 100 125 0.96 0.98 1.00 1.02 1.04 1.06 1.08 Tj(°C) VBO[Tj] / VBO[Tj=25°C] Fig. 4: Relative variation of breakover voltage versus junction temperature. 25 50 75 100 125 1 10 100 1000 2000 Tj(°C) IRM[Tj] / IRM[Tj=25°C] VRM > 50V VRM < 50V Fig. 5: Relative variation of leakage current versus junction temperature (typical values). 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 1 10 100 tp(s) Zth(j-a)(°CW) Fig. 6: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35 µm, recommended pad layout). 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 1 10 50 VT(V) IT(A) Tj=25°C Fig. 2: On-state voltage versus on-state current (typical values) |
Numéro de pièce similaire - SMP100LC-35 |
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Description similaire - SMP100LC-35 |
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