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BC856 Fiches technique(PDF) 3 Page - Vishay Siliconix |
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BC856 Fiches technique(HTML) 3 Page - Vishay Siliconix |
3 / 9 page VISHAY BC856 to BC859 Document Number 85135 Rev. 1.2, 08-Sep-04 Vishay Semiconductors www.vishay.com 3 Output admittance (current gain group B) - VCE = 5 V, - IC = 2 mA, f = 1 kHz hoe 30 60 µS Output admittance (current gain group C) - VCE = 5 V, - IC = 2 mA, f = 1 kHz hoe 60 110 µS Reverse voltage transfer ratio (current gain group A) - VCE = 5 V, - IC = 2 mA, f = 1 kHz hre 1.5 x 10-4 Reverse voltage transfer ratio (current gain group B) - VCE = 5 V, - IC = 2 mA, f = 1 kHz hre 2 x 10-4 Reverse voltage transfer ratio (current gain group C) - VCE = 5 V, - IC = 2 mA, f = 1 kHz hre 3 x 10-4 DC current gain (current gain group A) - VCE = 5 V, - IC = 10 µAhFE 90 DC current gain (current gain group B) - VCE = 5 V, - IC = 10 µAhFE 150 DC current gain (current gain group C) - VCE = 5 V, - IC = 10 µAhFE 270 DC current gain (current gain group A) - VCE = 5 V, - IC = 2 mA hFE 110 180 220 DC current gain (current gain group B) - VCE = 5 V, - IC = 2 mA hFE 200 290 450 DC current gain (current gain group C) - VCE = 5 V, - IC = 2 mA hFE 420 520 800 Collector saturation voltage - IC = 10 mA, - IB = 0.5 mA VCEsat 90 300 mV - IC = 100 mA, - IB = 5 mA VCEsat 250 650 mV Base saturation voltage - IC = 10 mA, - IB = 0.5 mA VBEsat 700 mV - IC = 100 mA, - IB = 5 mA VBEsat 900 mV Base - emiter voltage - VCE = 5 V, - IC = 2 mA VBE 600 660 750 mV - VCE = 5 V, - IC = 10 mA VBE 820 mV Collector-emitter cut-off current - VCE = 80 V BC856 ICES 0.2 15 nA - VCE = 50 V BC857 ICES 0.2 15 nA - VCE = 30 V BC858 ICES 0.2 15 nA BC859 ICES 0.2 15 nA - VCE = 80 V, Tj = 125 °C BC857 ICES 4 µA - VCE = 50 V, Tj = 125 °C BC857 ICES 4 µA - VCE = 30 V, Tj = 125 °C BC858 ICES 4 µA BC859 ICES 4 µA Collector-base cut-off current - VCB = 30 V ICBO 15 µA - VCB = 30 V, Tj = 150 °C ICBO 5 µA Parameter Test condition Part Symbol Min Typ Max Unit |
Numéro de pièce similaire - BC856 |
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Description similaire - BC856 |
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