 |
Moteur de recherche de fiches techniques de composants électroniques |
|
|
Moteur de recherche de fiches techniques de composants électroniques |
|
IRF3704ZCL Fiches technique(PDF) 2 Page - International Rectifier |
|
||||||||||||||||||||||||||||||
IRF3704ZCL Fiches technique(HTML) 2 Page - International Rectifier |
|
|
2 / 11 page  IRF3704ZCS/L 2 www.irf.com S D G Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units BVDSS Drain-to-Source Breakdown Voltage 20 ––– ––– V ∆ΒV DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.014 ––– V/°C RDS(on) Static Drain-to-Source On-Resistance ––– 6.3 7.9 m Ω ––– 8.9 11.1 VGS(th) Gate Threshold Voltage 1.65 2.1 2.55 V ∆V GS(th)/∆TJ Gate Threshold Voltage Coefficient ––– -5.6 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 µA ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 48 ––– ––– S Qg Total Gate Charge ––– 8.7 13 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.9 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.1 ––– nC Qgd Gate-to-Drain Charge ––– 2.3 ––– Qgodr Gate Charge Overdrive ––– 2.4 ––– See Fig. 16 Qsw Switch Charge (Qgs2 + Qgd) ––– 3.4 ––– Qoss Output Charge ––– 5.6 ––– nC td(on) Turn-On Delay Time ––– 8.9 ––– tr Rise Time ––– 38 ––– td(off) Turn-Off Delay Time ––– 11 ––– ns tf Fall Time ––– 4.2 ––– Ciss Input Capacitance ––– 1220 ––– Coss Output Capacitance ––– 390 ––– pF Crss Reverse Transfer Capacitance ––– 190 ––– Avalanche Characteristics Parameter Units EAS Single Pulse Avalanche Energy d mJ IAR Avalanche Current à A EAR Repetitive Avalanche Energy mJ Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current ––– ––– 67 g (Body Diode) A ISM Pulsed Source Current ––– ––– 260 (Body Diode) à VSD Diode Forward Voltage ––– ––– 1.0 V trr Reverse Recovery Time ––– 11 17 ns Qrr Reverse Recovery Charge ––– 2.3 3.5 nC MOSFET symbol VGS = 4.5V, ID = 17A e ––– VGS = 4.5V Typ. ––– ––– ID = 17A VGS = 0V VDS = 10V TJ = 25°C, IF = 17A, VDD = 10V di/dt = 100A/µs e TJ = 25°C, IS = 17A, VGS = 0V e showing the integral reverse p-n junction diode. VDS = VGS, ID = 250µA VDS = 16V, VGS = 0V VDS = 16V, VGS = 0V, TJ = 125°C Clamped Inductive Load VDS = 10V, ID = 17A VDS = 10V, VGS = 0V VDD = 10V, VGS = 4.5V e ID = 17A VDS = 10V Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 1mA VGS = 10V, ID = 21A e VGS = 20V VGS = -20V Conditions 5.7 Max. 36 17 ƒ = 1.0MHz |
Numéro de pièce similaire - IRF3704ZCL |
|
|
|
Lien URL |
| Politique de confidentialité |
| ALLDATASHEET.FR |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
French ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
