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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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SI4405DY Fiches technique(PDF) 2 Page - Vishay Siliconix |
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SI4405DY Fiches technique(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page  Si4405DY Vishay Siliconix www.vishay.com 2 Document Number: 71913 S-31726—Rev. D, 18-Aug-03 SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 mA - 1.0 - 3.0 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA Zero Gate Voltage Drain Current IDSS VDS = - 24 V, VGS = 0 V -1 mA Zero Gate Voltage Drain Current IDSS VDS = - 24 V, VGS = 0 V, TJ = 70_C -10 mA On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V -30 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 17 A 0.006 0.0075 W Forward Transconductancea gfs VDS = - 15 V, ID = - 17 A 47 S Diode Forward Voltagea VSD IS = - 2.9 A, VGS = 0 V - 0.75 - 1.1 V Dynamicb Total Gate Charge Qg 105 160 Gate-Source Charge Qgs VDS = - 15 V, VGS = - 10 V, ID = - 17 A 17.5 nC Gate-Drain Charge Qgd 29.5 Gate Resistance Rg 3 4 6.5 W Turn-On Delay Time td(on) 25 40 Rise Time tr VDD = - 15 V, RL = 15 W 15 25 Turn-Off Delay Time td(off) VDD = - 15 V, RL = 15 W ID ^ - 1 A, VGEN = - 10 V, RG = 6 W 190 285 ns Fall Time tf 80 120 Source-Drain Reverse Recovery Time trr IF = - 2.9 A, di/dt = 100 A/ms 70 110 Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 10 20 30 40 50 60 0 1234 5 VGS = 10 thru 5 V TC = 125_C -55 _C 25 _C Output Characteristics Transfer Characteristics VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) 4 V |
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