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54FCT245TD Fiches technique(PDF) 2 Page - Integrated Device Technology |
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54FCT245TD Fiches technique(HTML) 2 Page - Integrated Device Technology |
2 / 7 page MILITARYANDINDUSTRIALTEMPERATURERANGES 2 IDT54/74FCT245T/AT/CT FASTCMOSOCTALBIDIRECTIONALTRANSCEIVER PIN CONFIGURATION Symbol Description Max Unit VTERM(2) Terminal Voltage with Respect to GND –0.5 to +7 V VTERM(3) Terminal Voltage with Respect to GND –0.5 to VCC+0.5 V TSTG Storage Temperature –65 to +150 °C IOUT DC Output Current –60 to +120 mA ABSOLUTE MAXIMUM RATINGS(1) NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may exceed Vcc by +0.5V unless otherwise noted. 2. Inputs and Vcc terminals only. 3. Output and I/O terminals only. Pin Names Description OE Output Enable Inputs (Active LOW) T/R Transmit/Recieve Input A0 - A7 Side A Inputs or 3-State Outputs B0 - B7 Side B Inputs or 3-State Outputs PIN DESCRIPTION Symbol Parameter(1) Conditions Typ. Max. Unit CIN Input Capacitance VIN = 0V 6 10 pF COUT Output Capacitance VOUT = 0V 8 12 pF CAPACITANCE (TA = +25°C, F = 1.0MHz) NOTE: 1. This parameter is measured at characterization but not tested. NOTE: 1. H = HIGH Voltage Level X = Don’t Care L = LOW Voltage Level Z = High Impedance FUNCTION TABLE(1) Inputs OE T/R Outputs L L Bus B Data to Bus A L H Bus A Data to Bus B H X High Z State CERDIP/ SOIC/ SSOP/ QSOP/ TSSOP TOP VIEW 2 3 1 16 15 14 11 19 18 20 17 13 12 5 6 7 4 8 9 10 A2 A0 A1 VCC A3 A6 A4 A5 A7 GND OE B2 B0 B1 B3 B6 B4 B5 B7 T/R 1 2 3 4 5 7 9 6 8 10 11 12 13 14 15 16 17 18 19 20 B2 B0 B1 B3 B4 INDEX A2 A3 A6 A4 A5 LCC TOP VIEW |
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