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IRF6623 Fiches technique(PDF) 6 Page - International Rectifier |
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IRF6623 Fiches technique(HTML) 6 Page - International Rectifier |
6 / 8 page IRF6623 6 www.irf.com Fig 17. Diode Reverse Recovery Test Circuit for N-Channel HEXFET® Power MOSFETs Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period * VGS = 5V for Logic Level Devices * + - + + + - - - RG VDD • di/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Inductor Current DirectFET Substrate and PCB Layout, ST Outline (Small Size Can, T-Designation). Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs. 3 4 5 6 7 1 2 1- Drain 2- Drain 3- Source 4- Source 5- Gate 6- Drain 7- Drain |
Numéro de pièce similaire - IRF6623 |
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Description similaire - IRF6623 |
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