Moteur de recherche de fiches techniques de composants électroniques |
|
TPD2S703QDGSRQ1 Fiches technique(PDF) 4 Page - Texas Instruments |
|
|
TPD2S703QDGSRQ1 Fiches technique(HTML) 4 Page - Texas Instruments |
4 / 34 page 4 TPD2S703-Q1 SLLSEU8 – MARCH 2017 www.ti.com Product Folder Links: TPD2S703-Q1 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. (2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum. (3) Thermal limits and power dissipation limits must be observed. 6 Specifications 6.1 Absolute Maximum Ratings over operating free-air temperature range (unless otherwise noted) (1) (2) MIN MAX UNIT VPWR 5-V DC supply voltage for internal circuitry –0.3 7.7 V VREF Pin to set OVP threshold –0.3 6 V VD+, VD– Voltage range from connector-side USB data lines –0.3 18 V D+, D– Voltage range for internal USB data lines –0.3 VREF + 0.3 V VMODE Voltage on MODE pin –0.3 7.7 V VFLT Voltage on FLT pin –0.3 7.7 V VEN Voltage on enable pin –0.3 7.7 V TA Operating free air temperature(3) –40 125 °C TSTG Storage temperature –65 150 °C (1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification. 6.2 ESD Ratings—AEC Specification VALUE UNIT V(ESD) Electrostatic discharge Human-body model (HBM), per AEC Q100-002(1) All pins ±2000 V Charged-device model (CDM), per AEC Q100-011 All pins besides corners ±500 Corner pins ±750 (1) See Figure 23 for details on system level ESD testing setup. 6.3 ESD Ratings—IEC Specification VALUE UNIT V(ESD) Electrostatic discharge IEC 61000-4-2 contact discharge VD+, VD– pins(1) ±8000 V IEC 61000-4-2 air-gap discharge VD+, VD– pins(1) ±15000 (1) See Figure 23 for details on system level ESD testing setup. (2) VREF > 3 V. 6.4 ESD Ratings—ISO Specification VALUE UNIT VESD (1) Electrostatic discharge ISO 10605 (330 pF, 330 Ω) contact discharge (10 strikes) VD+, VD– pins ±8000 V ISO 10605 (330 pF, 330 Ω) air-gap discharge (10 strikes) VD+, VD– pins ±15000 ISO 10605 (150 pF, 330 Ω) contact discharge (10 strikes) VD+, VD– pins ±8000 ISO 10605 (150 pF, 330 Ω) air-gap discharge (10 strikes) VD+, VD– pins ±15000 ISO 10605 (330 pF, 2 k Ω) contact discharge (10 stikes)(2) VD+, VD– pins ±8000 ISO 10605 (330 pF, 2 k Ω) air-gap discharge (10 strikes) VD+, VD– pins ±15000 ISO 10605 (150 pF, 2 k Ω) air-gap discharge (10 discharges) VD+, VD– pins ±25000 |
Numéro de pièce similaire - TPD2S703QDGSRQ1 |
|
Description similaire - TPD2S703QDGSRQ1 |
|
|
Lien URL |
Politique de confidentialité |
ALLDATASHEET.FR |
ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |