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TPD2S703QDGSRQ1 Fiches technique(PDF) 4 Page - Texas Instruments

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No de pièce TPD2S703QDGSRQ1
Description  Automotive USB 2-Channel Data Line Short-to-Battery, Short-to-VBUS, and IEC ESD Protection
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

TPD2S703QDGSRQ1 Fiches technique(HTML) 4 Page - Texas Instruments

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TPD2S703-Q1
SLLSEU8 – MARCH 2017
www.ti.com
Product Folder Links: TPD2S703-Q1
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3)
Thermal limits and power dissipation limits must be observed.
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1) (2)
MIN
MAX
UNIT
VPWR
5-V DC supply voltage for internal circuitry
–0.3
7.7
V
VREF
Pin to set OVP threshold
–0.3
6
V
VD+,
VD–
Voltage range from connector-side USB data lines
–0.3
18
V
D+, D–
Voltage range for internal USB data lines
–0.3
VREF + 0.3
V
VMODE
Voltage on MODE pin
–0.3
7.7
V
VFLT
Voltage on FLT pin
–0.3
7.7
V
VEN
Voltage on enable pin
–0.3
7.7
V
TA
Operating free air temperature(3)
–40
125
°C
TSTG
Storage temperature
–65
150
°C
(1)
AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.
6.2 ESD Ratings—AEC Specification
VALUE
UNIT
V(ESD)
Electrostatic discharge
Human-body model (HBM), per AEC Q100-002(1)
All pins
±2000
V
Charged-device model (CDM), per AEC Q100-011
All pins besides
corners
±500
Corner pins
±750
(1)
See Figure 23 for details on system level ESD testing setup.
6.3 ESD Ratings—IEC Specification
VALUE
UNIT
V(ESD)
Electrostatic discharge
IEC 61000-4-2 contact discharge
VD+, VD– pins(1)
±8000
V
IEC 61000-4-2 air-gap discharge
VD+, VD– pins(1)
±15000
(1)
See Figure 23 for details on system level ESD testing setup.
(2)
VREF > 3 V.
6.4 ESD Ratings—ISO Specification
VALUE
UNIT
VESD
(1)
Electrostatic discharge
ISO 10605 (330 pF, 330
Ω) contact discharge
(10 strikes)
VD+, VD– pins
±8000
V
ISO 10605 (330 pF, 330
Ω) air-gap discharge
(10 strikes)
VD+, VD– pins
±15000
ISO 10605 (150 pF, 330
Ω) contact discharge
(10 strikes)
VD+, VD– pins
±8000
ISO 10605 (150 pF, 330
Ω) air-gap discharge
(10 strikes)
VD+, VD– pins
±15000
ISO 10605 (330 pF, 2 k
Ω) contact discharge (10
stikes)(2)
VD+, VD– pins
±8000
ISO 10605 (330 pF, 2 k
Ω) air-gap discharge (10
strikes)
VD+, VD– pins
±15000
ISO 10605 (150 pF, 2 k
Ω) air-gap discharge (10
discharges)
VD+, VD– pins
±25000


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