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STP315N10F7 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STP315N10F7 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 13 page STP315N10F7 Electrical characteristics DocID025348 Rev 4 5/13 Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 180 A ISDM(1) Source-drain current (pulsed) - 720 A VSD(2) Forward on voltage VGS = 0 V, ISD= 60 A - 1.5 V trr Reverse recovery time ISD = 180 A, di/dt = 100 A/µs VDD = 80 V, TJ= 150 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 85 ns Qrr Reverse recovery charge - 200 nC IRRM Reverse recovery current - 4.7 A Notes: (1)Pulse width limited by safe operating area. (2)Pulse duration = 300μs, duty cycle 1.5% |
Numéro de pièce similaire - STP315N10F7 |
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Description similaire - STP315N10F7 |
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