STU16N65M2 datasheet(7/16 Pages) STMICROELECTRONICS

No de pièce	STU16N65M2

Description	N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

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DocID027086 Rev 1

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STP16N65M2, STU16N65M2

Electrical characteristics

16

Figure 8. Normalized gate threshold voltage vs.

temperature

Figure 9. Normalized V(BR)DSS vs. temperature

VGS(th)

0.8

-75

-25

25

Tj(°C)

(norm)

0.6

75

0.7

0.9

1.0

125

1.1

ID = 250 µA

GIPD180920141442FSR

V(BR)DSS

0.96

-75

-25

75

Tj(°C)

25

(norm)

0.88

125

0.92

1.00

1.04

1.08

ID= 1mA

GIPD180920141448FSR

Figure 10. Static drain-source on-resistance

Figure 11. Normalized on-resistance vs.

temperature

RDS(on)

1

-75

-25

75

Tj(°C)

25

(norm)

0.2

125

0.6

1.4

1.8

2.2

VGS= 10V

GIPD180920141459FSR

Figure 12. Gate charge vs. gate-source voltage

Figure 13. Capacitance variations

Numéro de pièce similaire - STU16N65M2

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STU16N65M5	1Mb / 20P	N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247
Inchange Semiconductor ...	STU16N65M5	316Kb / 2P	isc N-Channel Mosfet Transistor

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Description similaire - STU16N65M2

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