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STGW60H65FB Fiches technique(PDF) 3 Page - STMicroelectronics |
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STGW60H65FB Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 16 page DocID025187 Rev 4 3/16 STGW60H65FB, STGWT60H65FB Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 650 V IC Continuous collector current at TC = 25 °C 80(1) 1. Current level is limited by bond wires. A Continuous collector current at TC = 100 °C 60 ICP (2) 2. Pulse width limited by maximum junction temperature. Pulsed collector current 240 A VGE Gate-emitter voltage ±20 V PTOT Total dissipation at TC = 25 °C 375 W Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature -55 to 175 Table 3. Thermal data Symbol Parameter Value Unit Rthj-C Thermal resistance junction-case 0.4 °C/W Rthj-A Thermal resistance junction-ambient 50 |
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