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STGW40M120DF3 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STGW40M120DF3 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 18 page DocID026224 Rev 3 3/18 STGW40M120DF3, STGWA40M120DF3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 1200 V IC Continuous collector current at TC = 25 °C 80 A IC Continuous collector current at TC = 100 °C 40 A ICP (1) 1. Pulse width limited by maximum junction temperature. Pulsed collector current 160 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 80 A IF Continuous forward current at TC = 100 °C 40 A IFP (1) Pulsed forward current 160 A PTOT Total dissipation at TC = 25 °C 468 W TSTG Storage temperature range - 55 to 150 °C TJ Operating junction temperature - 55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.32 °C/W RthJC Thermal resistance junction-case diode 0.74 °C/W RthJA Thermal resistance junction-ambient 50 °C/W |
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