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STGW35NC60WD Fiches technique(PDF) 4 Page - STMicroelectronics |
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STGW35NC60WD Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 14 page Electrical characteristics STGW35NC60WD 4/14 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC= 20 A VGE = 15 V, IC = 20 A,TC= 125 °C 2.2 1.8 2.6 V V VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE = 600 V VCE = 600 V, TC = 125 °C 250 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE = ±20 V ± 100 nA gfs Forward transconductance VCE = 15 V, IC = 20 A 15 S Table 5. Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE = 0 2080 175 52 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390 V, IC = 20 A, VGE = 15 V, (see Figure 18) 102 17.5 47 140 nC nC nC |
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