STGW30H60DFB datasheet(5/20 Pages) STMICROELECTRONICS

No de pièce	STGW30H60DFB

Description	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

Download	20 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

5 / 20 page

DocID026676 Rev 3

5/20

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB

Electrical characteristics

Table 6. Switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V,

see Figure 28

-37

-

ns

tr

Current rise time

-

14.6

-

ns

(di/dt)on

Turn-on current slope

-

1643

-

A/µs

td(off)

Turn-off delay time

146

-

ns

tf

Current fall time

-

23

-

ns

Eon

(1)

1.

Including the reverse recovery of the diode.

Turn-on switching energy

-

383

-

µJ

Eoff

(2)

2.

Including the tail of the collector current.

Turn-off switching energy

-

293

-

µJ

Ets

Total switching energy

-

676

-

µJ

td(on)

Turn-on delay time

VCE = 400 V, IC = 30 A,

RG = 10 Ω, VGE = 15 V,

TJ = 175 °C, see Figure 28

-35

-

ns

tr

Current rise time

-

16.1

-

ns

(di/dt)on

Turn-on current slope

-

1496

-

A/µs

td(off)

Turn-off delay time

-

158

-

ns

tf

Current fall time

-

65

-

ns

Eon

(1)

Turn-on switching energy

-

794

-

µJ

Eoff

(2)

Turn-off switching energy

-

572

-

µJ

Ets

Total switching energy

-

1366

-

µJ

Table 7. Diode switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

trr

Reverse recovery time

IF = 30 A, VR = 400 V,

di/dt=1000 A/µs

,

VGE = 15 V,

(see Figure 28)

-53

-

ns

Qrr

Reverse recovery charge

-

384

-

nC

Irrm

Reverse recovery current

-

14.5

-

A

dIrr/ /dt

Peak rate of fall of reverse

recovery current during tb

-

788

-

A/µs

Err

Reverse recovery energy

-

104

-

µJ

trr

Reverse recovery time

IF = 30 A, VR = 400 V,

di/dt=1000 A/µs

,

VGE = 15 V,

TJ = 175 °C, (see Figure 28)

-

104

-

ns

Qrr

Reverse recovery charge

-

1352

-

nC

Irrm

Reverse recovery current

-

26

-

A

dIrr/ /dt

Peak rate of fall of reverse

recovery current during tb

-

310

-

A/µs

Err

Reverse recovery energy

-

407

-

µJ

Numéro de pièce similaire - STGW30H60DFB

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGW30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT March 2013 Rev 3

More results

Description similaire - STGW30H60DFB

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed October 2015 Rev 2
	STGB30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed July 2014 Rev 2
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed March 2014 Rev 4
	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed October 2016 Rev 1
	STGW60H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed February 2014 Rev 3
	STGFW30H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed July 2015 Rev 5
	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT March 2013 Rev 3
	STGFW30V60F	1Mb / 19P	Trench gate field-stop IGBT, V series 600 V, 30 A very high speed April 2014 Rev 4
	STGFW30V60DF	1Mb / 15P	Trench gate field-stop IGBT, V series 600 V, 30 A very high speed March 2014 Rev 1
	STGWT40HP65FB	909Kb / 17P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed

More results

STGW30H60DFB Fiches technique(PDF) 5 Page - STMicroelectronics

STGW30H60DFB Fiches technique(HTML) 5 Page - STMicroelectronics

Numéro de pièce similaire - STGW30H60DFB

Description similaire - STGW30H60DFB

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20

Fiches technique Télécharger

Lien URL