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STGW30H60DFB Fiches technique(PDF) 5 Page - STMicroelectronics |
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STGW30H60DFB Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 20 page DocID026676 Rev 3 5/20 STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, see Figure 28 -37 - ns tr Current rise time - 14.6 - ns (di/dt)on Turn-on current slope - 1643 - A/µs td(off) Turn-off delay time 146 - ns tf Current fall time - 23 - ns Eon (1) 1. Including the reverse recovery of the diode. Turn-on switching energy - 383 - µJ Eoff (2) 2. Including the tail of the collector current. Turn-off switching energy - 293 - µJ Ets Total switching energy - 676 - µJ td(on) Turn-on delay time VCE = 400 V, IC = 30 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C, see Figure 28 -35 - ns tr Current rise time - 16.1 - ns (di/dt)on Turn-on current slope - 1496 - A/µs td(off) Turn-off delay time - 158 - ns tf Current fall time - 65 - ns Eon (1) Turn-on switching energy - 794 - µJ Eoff (2) Turn-off switching energy - 572 - µJ Ets Total switching energy - 1366 - µJ Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 30 A, VR = 400 V, di/dt=1000 A/µs , VGE = 15 V, (see Figure 28) -53 - ns Qrr Reverse recovery charge - 384 - nC Irrm Reverse recovery current - 14.5 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 788 - A/µs Err Reverse recovery energy - 104 - µJ trr Reverse recovery time IF = 30 A, VR = 400 V, di/dt=1000 A/µs , VGE = 15 V, TJ = 175 °C, (see Figure 28) - 104 - ns Qrr Reverse recovery charge - 1352 - nC Irrm Reverse recovery current - 26 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 310 - A/µs Err Reverse recovery energy - 407 - µJ |
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