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STGW20H60DF Fiches technique(PDF) 3 Page - STMicroelectronics |
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STGW20H60DF Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 17 page DocID024745 Rev 1 3/17 STGW20H60DF, STGWT20H60DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 °C 40 A Continuous collector current at T C = 100 °C 20 A I CP (1) 1. Limited by maximum junction temperature. Pulsed collector current 80 A V GE Gate-emitter voltage ±20 V I F Continuous forward current T C = 25 °C 40 A Continuous forward current at T C = 100 °C 20 I FP (2) 2. Pulse width limited by maximum junction temperature and turn-off within RBSOA. Pulsed forward current 80 A P TOT Total dissipation at T C = 25 °C 167 W T STG Storage temperature range - 55 to 150 °C T J Operating junction temperature - 55 to 175 Table 3. Thermal data Symbol Parameter Value Unit R thJC Thermal resistance junction-case IGBT 0.9 °C/W R thJC Thermal resistance junction-case diode 2.5 °C/W R thJA Thermal resistance junction-ambient 62.5 °C/W |
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