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STGD10NC60SD Fiches technique(PDF) 4 Page - STMicroelectronics |
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STGD10NC60SD Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STGD10NC60SD, STGF10NC60SD 4/16 Doc ID 15847 Rev 2 2 Electrical characteristics (TJ=25°C unless otherwise specified) Table 4. Static Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE= 0) IC= 1 mA 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15 V, IC= 5 A VGE= 15 V, IC= 5 A, TJ= 125 °C 1.45 1.45 1.65 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE=0) VCE= 600 V VCE=600 V, TJ=125 °C 150 1 µA mA IGES Gate-emitter leakage (VCE=0) VGE= ±20 V ±100 nA gfs Forward transconductance VCE = 15 V , IC = 5 A 3.5 S Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25 V, f = 1 MHz, VGE= 0 - 365 44 8 - pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 480 V, IC = 5 A, VGE = 15 V Figure 18 - 18 8 3.5 - nC nC nC |
Numéro de pièce similaire - STGD10NC60SD |
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Description similaire - STGD10NC60SD |
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