STGP30H60DFB datasheet(4/21 Pages) STMICROELECTRONICS

No de pièce	STGP30H60DFB

Description	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed

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Electrical characteristics

STGB30H60DFB, STGP30H60DFB

4/21

DocID026677 Rev 2

2

Electrical characteristics

TJ = 25 °C unless otherwise specified.

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

600

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 30 A

1.55

2

V

VGE = 15 V, IC = 30 A

TJ = 125 °C

1.65

VGE = 15 V, IC = 30 A

TJ = 175 °C

1.75

VF

Forward on-voltage

IF = 30 A

2

2.6

V

IF = 30 A; TJ = 125 °C

1.7

IF = 30 A; TJ = 175 °C

1.6

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

5

6

7

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 600 V

25

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE = 0

-3659

-

pF

Coes

Output capacitance

-

101

-

pF

Cres

Reverse transfer

capacitance

-76

-

pF

Qg

Total gate charge

VCC = 520 V, IC = 30 A,

VGE = 15 V, see Figure 29

-149

-

nC

Qge

Gate-emitter charge

-

25

-

nC

Qgc

Gate-collector charge

-

62

-

nC

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