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STGW20V60DF Fiches technique(PDF) 3 Page - STMicroelectronics |
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STGW20V60DF Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 23 page DocID024360 Rev 3 3/23 STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V CES Collector-emitter voltage (V GE = 0) 600 V I C Continuous collector current at T C = 25 °C 40 A I C Continuous collector current at T C = 100 °C 20 A I CP (1) 1. Pulse width limited by maximum junction temperature and turn-off within RBSOA Pulsed collector current 80 A V GE Gate-emitter voltage ±20 V I F Continuous forward current at T C = 25 °C 40 A I F Continuous forward current at T C = 100 °C 20 A I FP(1) Pulsed forward current 80 A P TOT Total dissipation at T C = 25 °C 167 W T STG Storage temperature range - 55 to 150 °C T J Operating junction temperature - 55 to 175 °C Table 3. Thermal data Symbol Parameter Value Unit R thJC Thermal resistance junction-case IGBT 0.9 °C/W R thJC Thermal resistance junction-case diode 2.08 °C/W R thJA Thermal resistance junction-ambient 50 °C/W |
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