STGW20V60DF datasheet(3/23 Pages) STMICROELECTRONICS

No de pièce	STGW20V60DF

Description	Low thermal resistance

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DocID024360 Rev 3

3/23

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF

Electrical ratings

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

V

CES

Collector-emitter voltage (V

GE

= 0)

600

V

I

C

Continuous collector current at T

C

= 25 °C

40

A

I

C

Continuous collector current at T

C

= 100 °C

20

A

I

CP

(1)

1.

Pulse width limited by maximum junction temperature and turn-off within RBSOA

Pulsed collector current

80

A

V

GE

Gate-emitter voltage

±20

V

I

F

Continuous forward current at T

C

= 25 °C

40

A

I

F

Continuous forward current at T

C

= 100 °C

20

A

I

FP(1)

Pulsed forward current

80

A

P

TOT

Total dissipation at T

C

= 25 °C

167

W

T

STG

Storage temperature range

- 55 to 150

°C

T

J

Operating junction temperature

- 55 to 175

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

R

thJC

Thermal resistance junction-case IGBT

0.9

°C/W

R

thJC

Thermal resistance junction-case diode

2.08

°C/W

R

thJA

Thermal resistance junction-ambient

50

°C/W

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