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STGP15H60DF Fiches technique(PDF) 5 Page - STMicroelectronics

No de pièce STGP15H60DF
Description  Trench gate field-stop IGBT, H series 600 V, 15 A high speed
Download  23 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGP15H60DF Fiches technique(HTML) 5 Page - STMicroelectronics

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DocID025113 Rev 2
5/23
STGB15H60DF, STGF15H60DF, STGP15H60DF
Electrical characteristics
23
Table 6. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
24.5
-
ns
tr
Current rise time
8.2
-
ns
(di/dt)on
Turn-on current slope
1470
-
A/µs
td(on)
Turn-on delay time
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
25
-
ns
-
tr
Current rise time
9-
ns
(di/dt)on
Turn-on current slope
1370
-
A/µs
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
18
-
ns
td(off)
Turn-off delay time
118
-
ns
tf
Current fall time
69
-
ns
tr(Voff)
Off voltage rise time
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
27
-
ns
td(off)
Turn-off delay time
124
-
ns
tf
Current fall time
101
-
ns
tsc
Short-circuit withstand time
VCC ≤ 360 V, VGE = 15 V,
RG = 10 Ω
35
-
µs
Table 7. Switching energy (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Eon
(1)
1.
Energy losses include reverse recovery of the diode.
Turn-on switching losses
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
-
136
-
µJ
Eoff
(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
207
-
µJ
Ets
Total switching losses
-
343
-
µJ
Eon
(1)
Turn-on switching losses
VCE = 400 V, IC = 15 A,
RG = 10 Ω, VGE = 15 V
TJ = 175 °C
-
224
-
µJ
Eoff
(2)
Turn-off switching losses
-
329
-
µJ
Ets
Total switching losses
-
553
-
µJ


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