STGB7H60DF datasheet(3/25 Pages) STMICROELECTRONICS

No de pièce	STGB7H60DF

Description	Trench gate field-stop IGBT, H series 600 V, 7 A high speed

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DocID027555 Rev 2

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STGB7H60DF, STGF7H60DF, STGP7H60DF

Electrical ratings

25

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

VCES

Collector-emitter voltage (VGE = 0)

600

V

IC

Continuous collector current at TC = 25 °C

14

14(1)

1.

Limited by maximum junction temperature.

A

Continuous collector current at TC = 100 °C

7

7(1)

ICP

(2)

2. Pulse width limited by maximum junction temperature.

Pulsed collector current

28

28(1)

A

VGE

Gate-emitter voltage

±20

V

IF

Continuous forward current TC = 25 °C

14

14(1)

A

Continuous forward current at TC = 100 °C

7

7(1)

IFP

(2)

Pulsed forward current

28

28(1)

A

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s, TC = 25 °C)

2500

V

PTOT

Total dissipation at TC = 25 °C

88

24

W

TSTG

Storage temperature range

- 55 to 150

°C

TJ

Operating junction temperature

- 55 to 175

Table 3. Thermal data

Symbol

Parameter

TO-220

D²PAK

TO-220FP

Unit

RthJC

Thermal resistance junction-case IGBT

1.7

6.2

°C/W

RthJC

Thermal resistance junction-case diode

2.8

6.25

°C/W

RthJA

Thermal resistance junction-ambient

62.5

°C/W

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Description similaire - STGB7H60DF

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGB5H60DF	872Kb / 30P	Trench gate field-stop IGBT, H series 600 V, 5 A high speed May 2015 Rev 3
	STGWT15H60F	845Kb / 15P	Trench gate field-stop IGBT, H series 600 V, 15 A high speed February 2017
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List of Unclassifed Man...	STGP20V60DF	2Mb / 23P	600 V, 20 A very high speed trench gate field-stop IGBT

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