STDV3055L104T4G datasheet(6/9 Pages) ONSEMI

No de pièce	STDV3055L104T4G

Description	Power MOSFET

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Fabricant	ONSEMI [ON Semiconductor]

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NTD3055L104, NTDV3055L104

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6

SAFE OPERATING AREA

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 12. Maximum Avalanche Energy versus

Starting Junction Temperature

0.1

1

100

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 13. Thermal Response

1

100

RDS(on) LIMIT

THERMAL LIMIT

PACKAGE LIMIT

0.1

0

25

50

75

100

125

10

ID = 11 A

10

175

Figure 14. Diode Reverse Recovery Waveform

di/dt

trr

ta

tp

IS

0.25 IS

TIME

IS

tb

30

70

VGS = 15 V

SINGLE PULSE

TC = 25°C

1 ms

100

ms

10 ms

dc

10

ms

150

50

t, TIME (s)

0.1

1.0

0.01

110

0.1

0.01

0.001

0.0001

0.00001

20

40

50

60

0.2

D = 0.5

0.1

RqJC(t) = r(t) RqJC

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) RqJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

0.05

0.01

SINGLE PULSE

0.02

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STDV3055L104T4G Fiches technique(PDF) 6 Page - ON Semiconductor

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