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STFILED627 Fiches technique(PDF) 4 Page - STMicroelectronics |
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STFILED627 Fiches technique(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STFILED627, STPLED627 4/15 DocID025170 Rev 1 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 620 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 620 V VDS = 620 V, TC = 125 °C 0.8 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 9 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.6 4.5 V RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 2.8 A 0.95 1.2 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 890 110 18 -pF Coss Output capacitance - 110 - pF Crss Reverse transfer capacitance -18 - pF Coss(er) (1) 1. It is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Equivalent output capacitance energy related VGS = 0, VDS = 0 to 480 V -28 - pF Coss(tr) (2) 2. It is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS increases from 0 to 80% VDSS. Equivalent output capacitance time related -63 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 3.5 - Ω Qg Total gate charge VDD = 496 V, ID = 5.5 A, VGS = 10 V (see Figure 18) -35 - nC Qgs Gate-source charge - 4.5 - nC Qgd Gate-drain charge - 23 - nC Obsolete Product(s) - Obsolete Product(s) |
Numéro de pièce similaire - STFILED627 |
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Description similaire - STFILED627 |
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