STFILED627 datasheet(4/15 Pages) STMICROELECTRONICS

No de pièce	STFILED627

Description	N-channel 620 V, 0.95 廓 typ., 7.0 A Power MOSFET in I짼PAKFP and TO-220

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Electrical characteristics

STFILED627, STPLED627

4/15

DocID025170 Rev 1

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

620

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 620 V

VDS = 620 V, TC = 125 °C

0.8

50

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

± 9

µA

VGS(th)

Gate threshold voltage VDS = VGS, ID = 50 µA

3

3.6

4.5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 2.8 A

0.95

1.2

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz, VGS = 0

-

890

110

18

-pF

Coss

Output capacitance

-

110

-

pF

Crss

Reverse transfer

capacitance

-18

-

pF

Coss(er)

(1)

1.

It is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance energy

-28

-

pF

Coss(tr)

(2)

2.

It is defined as a constant equivalent capacitance giving the same storage energy as Coss when VDS

increases from 0 to 80% VDSS.

Equivalent output

capacitance time

-

pF

RG

Intrinsic gate

resistance

f = 1 MHz open drain

-

3.5

-

Ω

Qg

Total gate charge

VDD = 496 V, ID = 5.5 A,

VGS = 10 V

(see Figure 18)

-35

-

nC

Qgs

Gate-source charge

-

4.5

-

nC

Qgd

Gate-drain charge

-

23

-

nC

Obsolete

Product(s)

- Obsolete

Product(s)

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