STFI20NK50Z datasheet(3/13 Pages) STMICROELECTRONICS

No de pièce	STFI20NK50Z

Description	N-channel 500 V, 0.23 廓, 17 A Zener-protected SuperMESH?? Power MOSFET in I짼PAKFP package

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STFI20NK50Z

Electrical ratings

Doc ID 019007 Rev 3

3/13

1

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

500

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

17(1)

1.

Limited by maximum junction temperature.

A

ID

Drain current (continuous) at TC = 100 °C

10.71(1)

A

IDM

(2)

2.

Pulse width limited by safe operating area.

Drain current (pulsed)

68

A

PTOT

Total dissipation at TC = 25 °C

40

W

ESD

Gate-source human body model

(R=1,5 k

Ω, C=100 pF)

6kV

VISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t = 1 s; TC = 25 °C)

2500

V

dv/dt (3)

3.

ISD < 17 A, di/dt < 200 A/µs, VDD =80% V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Storage temperature

-55 to 150

°C

Tj

Max operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

3.1

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

(1)

1.

Limited by maximum junction temperature.

Repetitive or non repetitive avalanche current

17

A

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=IAR, VDD=50 V)

850

mJ

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