SI2316DS datasheet(1/4 Pages) VISHAY

No de pièce	SI2316DS

Description	N-Channel 30-V (D-S) MOSFET

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FEATURES

D TrenchFETr Power MOSFET

APPLICATIONS

D Battery Switch

Si2316DS

Vishay Siliconix

New Product

Document Number: 71798

S-05481—Rev. A, 21-Jan-02

www.vishay.com

1

N-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.050 @ VGS = 10 V

3.4

30

0.085 @ VGS = 4.5 V

2.6

G

S

D

Top View

2

3

TO-236

(SOT-23)

1

Si2316DS (C6)*

*Marking Code

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 sec

Steady State

Unit

Drain-Source Voltage

VDS

30

Gate-Source Voltage

VGS

"20

V

_

TA= 25_C

3.4

2.9

Continuous Drain Current (TJ = 150_C)a, b

TA= 70_C

ID

2.7

2.3

Pulsed Drain Currentb

IDM

16

A

Continuous Source Current (Diode Conduction)a, b

IS

0.8

TA= 25_C

0.96

0.7

Power Dissipationa, b

TA= 70_C

PD

0.6

0.45

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 5 sec

100

130

Maximum Junction-to-Ambienta

Steady State

RthJA

140

175

_C/W

Maximum Junction-to-Foot (drain)

Steady State

RthJF

60

75

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

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