STD4NK100Z datasheet(3/16 Pages) STMICROELECTRONICS

No de pièce	STD4NK100Z

Description	Very low intrinsic capacitance

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DocID022821 Rev 2

3/16

STD4NK100Z

Electrical ratings

16

1

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

1000

V

VGS

Gate-source voltage

± 30

V

ID

Drain current (continuous) at TC = 25 °C

2.2

A

ID

Drain current (continuous) at TC=100 °C

1

A

IDM

(1)

1.

Pulse width limited by safe operating area

Drain current (pulsed)

8.8

A

PTOT

Total dissipation at TC = 25 °C

90

W

VESD(G-S) Gate source ESD (HBM-C=100pF, R=1.5 kΩ)

3000

V

dv/dt

(2)

2.

ISD ≤ 2.2 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

Peak diode recovery voltage slope

4.5

V/ns

TJ

Tstg

Operating junction temperature

Storage temperature

-55 to 150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.39

°C/W

Rthj-pcb

(1)

1.

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

50

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by TJMAX)

2.2

A

EAS

Single pulse avalanche energy

(starting TJ=25 °C, ID=IAR, VDD=50 V)

110

mJ

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