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CSD18510Q5BT Fiches technique(PDF) 3 Page - Texas Instruments

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No de pièce CSD18510Q5BT
Description  N-Channel NexFET Power MOSFET
Download  13 Pages
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Fabricant  TI1 [Texas Instruments]
Site Internet  http://www.ti.com
Logo TI1 - Texas Instruments

CSD18510Q5BT Fiches technique(HTML) 3 Page - Texas Instruments

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CSD18510Q5B
www.ti.com
SLPS632 – MARCH 2017
Product Folder Links: CSD18510Q5B
Submit Documentation Feedback
Copyright © 2017, Texas Instruments Incorporated
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
STATIC CHARACTERISTICS
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
40
V
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 32 V
1
μA
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = 20 V
100
nA
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
1.2
1.7
2.3
V
RDS(on)
Drain-to-source on resistance
VGS = 4.5 V, ID = 32 A
1.2
1.6
m
VGS = 10 V, ID = 32 A
0.79
0.96
gfs
Transconductance
VDS = 4 V, ID = 32 A
147
S
DYNAMIC CHARACTERISTICS
Ciss
Input capacitance
VGS = 0 V, VDS = 20 V, ƒ = 1 MHz
8770
11400
pF
Coss
Output capacitance
832
1080
pF
Crss
Reverse transfer capacitance
424
551
pF
RG
Series gate resistance
0.9
1.8
Qg
Gate charge total (4.5 V)
VDS = 20 V, ID = 32 A
58
75
nC
Qg
Gate charge total (10 V)
118
153
nC
Qgd
Gate charge gate-to-drain
21
nC
Qgs
Gate charge gate-to-source
28
nC
Qg(th)
Gate charge at Vth
15
nC
Qoss
Output charge
VDS = 20 V, VGS = 0 V
35
nC
td(on)
Turnon delay time
VDS = 20 V, VGS = 10 V,
IDS = 32 A, RG = 0 Ω
8
ns
tr
Rise time
17
ns
td(off)
Turnoff delay time
44
ns
tf
Fall time
15
ns
DIODE CHARACTERISTICS
VSD
Diode forward voltage
ISD = 32 A, VGS = 0 V
0.8
1.0
V
Qrr
Reverse recovery charge
VDS= 20 V, IF = 32 A,
di/dt = 300 A/μs
31
nC
trr
Reverse recovery time
19
ns
(1)
RθJC is determined with the device mounted on a 1-in
2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 1.5-in × 1.5-in (3.81-cm × 3.81-
cm), 0.06-in (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
THERMAL METRIC
MIN
TYP
MAX
UNIT
RθJC
Junction-to-case thermal resistance(1)
0.8
°C/W
RθJA
Junction-to-ambient thermal resistance(1)(2)
50
°C/W


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