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STFI13N65M2 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STFI13N65M2 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 15 page December 2014 DocID026893 Rev 2 1/15 STF13N65M2, STFI13N65M2 N-channel 650 V, 0.37 Ω typ., 10 A MDmesh™ M2 Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet - production data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Excellent output capacitance (Coss) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. TO-220FP 1 2 3 1 2 3 I2PAKFP (TO-281) AM15572v1 Order code VDS RDS(on) max ID STF13N65M2 650 V 0.43 Ω 10A STFI13N65M2 Table 1. Device summary Order code Marking Package Packaging STF13N65M2 13N65M2 TO-220FP Tube STFI13N65M2 I2PAKFP (TO-281) www.st.com |
Numéro de pièce similaire - STFI13N65M2 |
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