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STF10N60M2 Fiches technique(PDF) 3 Page - STMicroelectronics |
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STF10N60M2 Fiches technique(HTML) 3 Page - STMicroelectronics |
3 / 13 page STF10N60M2 Electrical ratings DocID024712 Rev 4 3/13 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VGS Gate-source voltage ±25 V ID(1) Drain current (continuous) at Tcase = 25 °C 7.5 A Drain current (continuous) at Tcase = 100 °C 4.9 IDM(2) Drain current (pulsed) 30 A PTOT Total dissipation at Tcase = 25 °C 25 W dv/dt(3) Peak diode recovery voltage slope 15 V/ns dv/dt(4) MOSFET dv/dt ruggedness 50 VISO(5) Insulation withstand voltage (RMS) from all three leads to external heat sink 2500 V Tstg Storage temperature range -55 to 150 °C Tj Operating junction temperature range Notes: (1)Limited by package. (2)Pulse limited by safe operating area. (3) ISD ≤ 7.5 A, di/dt ≤ 400 A/μs; VDS peak < V(BR)DSS, VDD = 400 V (4) VDS ≤ 480 V. (5)t = 1 s; TC = 25 °C. Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 5 °C/W Rthj-amb Thermal resistance junction-ambient 62.5 Table 4: Avalanche characteristics Symbol Parameter Value Unit IAR(1) Avalanche current, repetitive or not repetitive 1.5 A EAS(2) Single pulse avalanche energy 110 mJ Notes: (1) Pulse width limited by Tjmax. (2) Starting Tj = 25 °C, ID = IAR, VDD = 50 V. |
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