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STD46P4LLF6 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STD46P4LLF6 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 16 page STD46P4LLF6 Electrical characteristics DocID025772 Rev 3 5/16 Table 6: Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 20 V, ID = 23 A, RG = 4.7 Ω, VGS = 10 V - 49.4 - ns tr Rise time - 60.6 - ns td(off) Turn-off delay time - 170 - ns tf Fall time - 20 - ns Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit VSD (1) Forward on voltage ISD = 23 A, VGS = 0 - 1.1 V trr Reverse recovery time ISD = 46 A, di/dt = 100 A/µs, VDD = 24 V - 29 ns Qrr Reverse recovery charge - 27.6 nC IRRM Reverse recovery current - 1.9 A Notes: (1) Pulsed: pulse duration = 300 µs, duty cycle 1.5% For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. |
Numéro de pièce similaire - STD46P4LLF6 |
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Description similaire - STD46P4LLF6 |
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