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STU5N60M2 Fiches technique(PDF) 5 Page - STMicroelectronics |
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STU5N60M2 Fiches technique(HTML) 5 Page - STMicroelectronics |
5 / 22 page STD5N60M2, STP5N60M2, STU5N60M2 Electrical characteristics DocID025318 Rev 4 5/22 Table 8: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 3.5 A ISDM (1) Source-drain current (pulsed) - 14 A VSD (2) Forward on voltage VGS = 0 V, ISD = 3.5 A - 1.6 V trr Reverse recovery time ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 220 ns Qrr Reverse recovery charge - 1.05 µC IRRM Reverse recovery current - 9.5 A trr Reverse recovery time ISD = 3.5 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C (see Figure 18: "Test circuit for inductive load switching and diode recovery times") - 314 ns Qrr Reverse recovery charge - 1.5 µC IRRM Reverse recovery current - 9.5 A Notes: (1) Pulse width is limited by safe operating area. (2) Pulse test: pulse duration = 300 µs, duty cycle 1.5 %. |
Numéro de pièce similaire - STU5N60M2 |
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Description similaire - STU5N60M2 |
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