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STBLED627 Fiches technique(PDF) 1 Page - STMicroelectronics |
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STBLED627 Fiches technique(HTML) 1 Page - STMicroelectronics |
1 / 18 page This is information on a product in full production. August 2013 DocID025173 Rev 1 1/18 18 STBLED627, STDLED627 N-channel 620 V, 0.95 Ω, 7.0 A Power MOSFET in D2PAK and in DPAK Datasheet - production data Figure 1. Internal schematic diagram Features • 100% avalanche tested • Extremely high dv/dt capability • Gate charge minimized • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting applications Description These Power MOSFETs boast extremely low on resistance and very good dv/dt capability, rendering them suitable for buck-boost and fyback topologies. 1 3 TAB 1 3 TAB D²PAK DPAK D(2,TAB) G(1) S(3) AM01476v1 Order codes VDSS RDS(on) max. ID Pw STBLED627 620 V < 1.2 Ω 7.0 A 90 W STDLED627 Table 1. Device summary Order codes Marking Package Packaging STBLED627 LED627 D²PAK DPAK Tape and reel STDLED627 www.st.com |
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